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| inchange semiconductor product specification silicon npn power transistors 2SC3988 description ? ? with to-3pn package ? high breakdown voltage high reliability. ? wide area of safe operation ? fast switching speed applications ? 500v/25a switching r egulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 25 a i cp collector current-peak 40 a i b base current 8 a p c collector power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3988 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 800 v v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = ?t 500 v v (br)ebo emitter-base breakdown voltage i c =1ma ;i c =0 7 v v cex(sus) collector-emitter sustaining voltage i c =10a;i b1 =-i b2 =2a; l=200 | h 500 v v cesat collector-emitter saturation voltage i c =12a; i b =2.4a 1.0 v v besat base-emitter saturation voltage i c =12a; i b =2.4a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =2.4a ; v ce =5v 15 50 h fe-2 dc current gain i c =12a ; v ce =5v 8 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 260 pf f t transition frequency i c =2.4a ; v ce =10v 18 mhz switching times t on turn-on time 0.5 | s t stg storage time 3.0 | s t f fall time 5i b1 =-2.5i b2 = i c =14a v cc ?? 200v;r l =14.3 |? 0.3 | s ? h fe-1 classifications l m n 15-30 20-40 30-50 inchange semiconductor product specification 3 silicon npn power transistors 2SC3988 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) inchange semiconductor product specification 4 silicon npn power transistors 2SC3988 |
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